The Diffusion Process of Metastable Carrieres in Bismuth

González de Sande, Juan Carlos and Sanchez Balmaseda, Margarita and Guerra Perez, Jose Manuel (1995). The Diffusion Process of Metastable Carrieres in Bismuth. "Journal of Applied Physics", v. 77 (n. 12); pp. 6358-6360. ISSN 0021-8979. https://doi.org/10.1063/1.359107.

Description

Title: The Diffusion Process of Metastable Carrieres in Bismuth
Author/s:
  • González de Sande, Juan Carlos
  • Sanchez Balmaseda, Margarita
  • Guerra Perez, Jose Manuel
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: June 1995
ISSN: 0021-8979
Volume: 77
Subjects:
Faculty: E.U.I.T. Telecomunicación (UPM)
Department: Ingeniería de Circuitos y Sistemas [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The diffusion process of electrons and holes which have been pumped into a metastable band in bismuth films by a 1.064‐μm laser pulse is considered in the calculation of the induced thermal gradient. The fit between the temporal evolution of this calculated thermal gradient and that of the thermoelectric response of films to the laser excitation allows us to estimate an upper limit of the ambipolar diffusion coefficient of metastable carriers

More information

Item ID: 10124
DC Identifier: http://oa.upm.es/10124/
OAI Identifier: oai:oa.upm.es:10124
DOI: 10.1063/1.359107
Official URL: http://jap.aip.org/resource/1/japiau/v77/i12/p6358_s1?isAuthorized=no
Deposited by: Memoria Investigacion
Deposited on: 23 Jan 2012 12:00
Last Modified: 20 Apr 2016 18:22
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