Energy Dependence of the Nernst-Ettingshausen Effect Induced By Pulsed Laser Light in Bismuth Films

Sanchez Balmaseda, Margarita and González de Sande, Juan Carlos and Guerra Perez, Jose Manuel (1994). Energy Dependence of the Nernst-Ettingshausen Effect Induced By Pulsed Laser Light in Bismuth Films. "Physical review B", v. 50 (n. 19); pp. 14561-14564. ISSN 0031-899X. https://doi.org/10.1103/PhysRevB.50.14561.

Description

Title: Energy Dependence of the Nernst-Ettingshausen Effect Induced By Pulsed Laser Light in Bismuth Films
Author/s:
  • Sanchez Balmaseda, Margarita
  • González de Sande, Juan Carlos
  • Guerra Perez, Jose Manuel
Item Type: Article
Título de Revista/Publicación: Physical review B
Date: November 1994
ISSN: 0031-899X
Volume: 50
Subjects:
Faculty: E.U.I.T. Telecomunicación (UPM)
Department: Ingeniería de Circuitos y Sistemas [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The behavior with the irradiation energy and with the magnetic field of the thermomagnetic response induced by laser pulses in 5.5-μm Bi films at room temperature is reported in this paper. The Nernst-Ettingshausen coefficient at an applied magnetic field of 1 T is estimated: QNE≃1.0×10-5 V/T K. A good agreement is found when these results are compared with those reported earlier in polycrystalline bulk samples obtained by a conventional method. This supports the reliability of the pulsed laser technique in the measurement of weak transport effects and indicates that the optically pumped carriers hardly influence the transport properties of bismuth.

More information

Item ID: 10125
DC Identifier: http://oa.upm.es/10125/
OAI Identifier: oai:oa.upm.es:10125
DOI: 10.1103/PhysRevB.50.14561
Official URL: http://prb.aps.org/abstract/PRB/v50/i19/p14561_1
Deposited by: Memoria Investigacion
Deposited on: 23 Jan 2012 11:33
Last Modified: 20 Apr 2016 18:22
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