Radiative thermal escape in intermediate band solar cells

Luque López, Antonio and Martí Vega, Antonio and Antolín Fernández, Elisa and García-Linares Fontes, Pablo and Tobías Galicia, Ignacio and Ramiro Gonzalez, Iñigo (2011). Radiative thermal escape in intermediate band solar cells. "AIP Advances", v. 1 (n. 2); pp. 1-6. ISSN 2158-3226. https://doi.org/10.1063/1.3597326.

Description

Title: Radiative thermal escape in intermediate band solar cells
Author/s:
  • Luque López, Antonio
  • Martí Vega, Antonio
  • Antolín Fernández, Elisa
  • García-Linares Fontes, Pablo
  • Tobías Galicia, Ignacio
  • Ramiro Gonzalez, Iñigo
Item Type: Article
Título de Revista/Publicación: AIP Advances
Date: 2011
Volume: 1
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

To achieve high efficiency, the intermediate band (IB) solar cell must generate photocurrent from sub-bandgap photons at a voltage higher than that of a single contributing sub-bandgap photon. To achieve the latter, it is necessary that the IB levels be properly isolated from the valence and conduction bands. We prove that this is not the case for IB cells formed with the confined levels of InAs quantum dots (QDs) in GaAs grown so far due to the strong density of internal thermal photons at the transition energies involved. To counteract this, the QD must be smaller.

More information

Item ID: 11231
DC Identifier: http://oa.upm.es/11231/
OAI Identifier: oai:oa.upm.es:11231
DOI: 10.1063/1.3597326
Official URL: http://aipadvances.aip.org/resource/1/aaidbi/v1/i2/p022125_s1
Deposited by: Memoria Investigacion
Deposited on: 03 Jul 2012 08:16
Last Modified: 20 Apr 2016 19:22
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