Transport properties of CuGaSe(2)-based thin-film solar cells as a function of absorber composition

Rusu, M. and Bar, M. and Fuertes Marrón, David and Lehmann, Sebastian and Schedel Niedrig, T. and Lux Steiner, M. Ch. (2011). Transport properties of CuGaSe(2)-based thin-film solar cells as a function of absorber composition. "Thin Solid Films", v. 519 (n. 21); pp. 7304-7307. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2011.01.185.

Description

Title: Transport properties of CuGaSe(2)-based thin-film solar cells as a function of absorber composition
Author/s:
  • Rusu, M.
  • Bar, M.
  • Fuertes Marrón, David
  • Lehmann, Sebastian
  • Schedel Niedrig, T.
  • Lux Steiner, M. Ch.
Item Type: Article
Título de Revista/Publicación: Thin Solid Films
Date: August 2011
ISSN: 0040-6090
Volume: 519
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The transport properties of thin-film solar cells based on wide-gap CuGaSe(2) absorbers have been investigated as a function of the bulk [Ga]/[Cu] ratio ranging from 1.01 to 1.33. We find that (i) the recombination processes in devices prepared from absorbers with a composition close to stoichiometry ([Ga]/[Cu] = 1.01) are strongly tunnelling assisted resulting in low recombination activation energies (E(a)) of approx. 0.95 eV in the dark and 1.36 eV under illumination. (ii) With an increasing [Ga]/[Cu] ratio, the transport mechanism changes to be dominated by thermally activated Shockley-Read-Hall recombination with similar E(a) values of approx. 1.52-1.57 eV for bulk [Ga]/[Cu] ratios of 1.12-1.33. The dominant recombination processes take place at the interface between CdS buffer and CuGaSe(2) absorber independently from the absorber composition. The increase of E(a) with the [Ga]/[Cu] ratio correlates with the open circuit voltage and explains the better performance of corresponding solar cells.

More information

Item ID: 11232
DC Identifier: http://oa.upm.es/11232/
OAI Identifier: oai:oa.upm.es:11232
DOI: 10.1016/j.tsf.2011.01.185
Deposited by: Memoria Investigacion
Deposited on: 04 Jul 2012 10:12
Last Modified: 20 Apr 2016 19:22
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