Citation
Gonzalez Arrabal, Raquel and Redondo-Cubero, Andrés and González, Y. and González, L. and Martin Gonzalez, Mercedes
(2011).
Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films.
"Nuclear Instruments and Methods in Physics Research B", v. 269
(n. 8);
pp. 733-738.
ISSN 0167-5087.
https://doi.org/10.1016/j.nimb.2011.02.004.
Abstract
The lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements
