Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films

Gonzalez Arrabal, Raquel; Redondo-Cubero, Andrés; González, Y.; González, L. y Martin Gonzalez, Mercedes (2011). Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films. "Nuclear Instruments and Methods in Physics Research B", v. 269 (n. 8); pp. 733-738. ISSN 0167-5087. https://doi.org/10.1016/j.nimb.2011.02.004.

Descripción

Título: Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films
Autor/es:
  • Gonzalez Arrabal, Raquel
  • Redondo-Cubero, Andrés
  • González, Y.
  • González, L.
  • Martin Gonzalez, Mercedes
Tipo de Documento: Artículo
Título de Revista/Publicación: Nuclear Instruments and Methods in Physics Research B
Fecha: Abril 2011
Volumen: 269
Materias:
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Ingeniería Nuclear [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements

Más información

ID de Registro: 11460
Identificador DC: http://oa.upm.es/11460/
Identificador OAI: oai:oa.upm.es:11460
Identificador DOI: 10.1016/j.nimb.2011.02.004
Depositado por: Memoria Investigacion
Depositado el: 23 Jul 2012 11:57
Ultima Modificación: 20 Abr 2016 19:32
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