Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films

Gonzalez Arrabal, Raquel and Redondo-Cubero, Andrés and González, Y. and González, L. and Martin Gonzalez, Mercedes (2011). Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films. "Nuclear Instruments and Methods in Physics Research B", v. 269 (n. 8); pp. 733-738. ISSN 0167-5087. https://doi.org/10.1016/j.nimb.2011.02.004.

Description

Title: Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films
Author/s:
  • Gonzalez Arrabal, Raquel
  • Redondo-Cubero, Andrés
  • González, Y.
  • González, L.
  • Martin Gonzalez, Mercedes
Item Type: Article
Título de Revista/Publicación: Nuclear Instruments and Methods in Physics Research B
Date: April 2011
ISSN: 0167-5087
Volume: 269
Subjects:
Faculty: E.T.S.I. Industriales (UPM)
Department: Ingeniería Nuclear [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements

More information

Item ID: 11460
DC Identifier: http://oa.upm.es/11460/
OAI Identifier: oai:oa.upm.es:11460
DOI: 10.1016/j.nimb.2011.02.004
Deposited by: Memoria Investigacion
Deposited on: 23 Jul 2012 11:57
Last Modified: 20 Apr 2016 19:32
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