Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

Brückner, Sebastian and Supplie, Oliver and Barrigón Montañés, Enrique and Kleinschmidt, Peter and Dobrich, Anja and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Döscher, Henning and Hannappel, Thomas (2011). Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates. In: "37th IEEE Photovoltaic Specialist Conference", 19/06/2011 - 24/06/2011, Seattle, Washington, USA. ISBN 978-1-4244-9966-3. pp. 2538-2542.

Description

Title: Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates
Author/s:
  • Brückner, Sebastian
  • Supplie, Oliver
  • Barrigón Montañés, Enrique
  • Kleinschmidt, Peter
  • Dobrich, Anja
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Döscher, Henning
  • Hannappel, Thomas
Item Type: Presentation at Congress or Conference (Article)
Event Title: 37th IEEE Photovoltaic Specialist Conference
Event Dates: 19/06/2011 - 24/06/2011
Event Location: Seattle, Washington, USA
Title of Book: Proceedings of 37th IEEE Photovoltaic Specialist Conference
Date: 2011
ISBN: 978-1-4244-9966-3
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

More information

Item ID: 11716
DC Identifier: http://oa.upm.es/11716/
OAI Identifier: oai:oa.upm.es:11716
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6186464
Deposited by: Memoria Investigacion
Deposited on: 09 Oct 2012 10:01
Last Modified: 20 Apr 2016 19:42
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