Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

Bengoechea Encabo, Ana and Barbagini, Francesca and Fernández-Garrido, Sergio and Grandal Quintana, Javier and Ristic, Jelena and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Jahn, U. and Luna García de la Infanta, Esperanza and Trampert, Achim (2011). Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks. "Journal of Crystal Growth", v. 325 (n. 1); pp. 89-92. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2011.04.035.

Description

Title: Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
Author/s:
  • Bengoechea Encabo, Ana
  • Barbagini, Francesca
  • Fernández-Garrido, Sergio
  • Grandal Quintana, Javier
  • Ristic, Jelena
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
  • Jahn, U.
  • Luna García de la Infanta, Esperanza
  • Trampert, Achim
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: 2011
ISSN: 0022-0248
Volume: 325
Subjects:
Freetext Keywords: A3. MBE; A3. Selective area growth; B1. GaN nanocolumns
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth conditions may lead to selective growth but not be suitable for subsequent vertical growth. With optimized conditions, ordered GaN nanocolumns can be grown with a wide variety of diameters. In this work, ordered GaN nanocolumns with diameter as small as 50 nm are shown.

More information

Item ID: 11859
DC Identifier: http://oa.upm.es/11859/
OAI Identifier: oai:oa.upm.es:11859
DOI: 10.1016/j.jcrysgro.2011.04.035
Official URL: http://www.sciencedirect.com/science/article/pii/S0022024811004210
Deposited by: Memoria Investigacion
Deposited on: 15 Oct 2012 10:02
Last Modified: 21 Apr 2016 11:02
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