InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy

Grandal Quintana, Javier and Pereiro Viterbo, Juan and Bengoechea Encabo, Ana and Fernández-Garrido, Sergio and Sánchez García, Miguel Angel and Muñoz Merino, Elias and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2011). InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy. "Applied Physics Letters", v. 98 (n. 6); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3552195.

Description

Title: InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
Author/s:
  • Grandal Quintana, Javier
  • Pereiro Viterbo, Juan
  • Bengoechea Encabo, Ana
  • Fernández-Garrido, Sergio
  • Sánchez García, Miguel Angel
  • Muñoz Merino, Elias
  • Calleja Pardo, Enrique
  • Luna García de la Infanta, Esperanza
  • Trampert, Achim
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: February 2011
ISSN: 0003-6951
Volume: 98
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 μm. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 μm. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells’ thickness fluctuations as observed by transmission electron microscopy.

More information

Item ID: 11860
DC Identifier: http://oa.upm.es/11860/
OAI Identifier: oai:oa.upm.es:11860
DOI: 10.1063/1.3552195
Deposited by: Memoria Investigacion
Deposited on: 17 Oct 2012 07:26
Last Modified: 21 Apr 2016 11:02
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