High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

Gacevic, Zarko and Fernández-Garrido, Sergio and Rebled, J.M. and Estradé, S. and Peiró, F. and Calleja Pardo, Enrique (2011). High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy. "Applied Physics Letters", v. 99 (n. 3); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3614434.

Description

Title: High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Author/s:
  • Gacevic, Zarko
  • Fernández-Garrido, Sergio
  • Rebled, J.M.
  • Estradé, S.
  • Peiró, F.
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: 2011
ISSN: 0003-6951
Volume: 99
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We report on properties of high quality ~60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be +/- 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

More information

Item ID: 11863
DC Identifier: http://oa.upm.es/11863/
OAI Identifier: oai:oa.upm.es:11863
DOI: 10.1063/1.3614434
Official URL: http://apl.aip.org/resource/1/applab/v99/i3/p031103_s1
Deposited by: Memoria Investigacion
Deposited on: 11 Oct 2012 12:58
Last Modified: 21 Apr 2016 11:02
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