Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Bengoechea Encabo, Ana and Steven, Albert and Sánchez García, Miguel Angel and López, L.L. and Estradé, S. and Rebled, J.M. and Peiró, F. and Nataf, G. and Mierry, P. de and Zuniga Perez, J. and Calleja Pardo, Enrique (2012). Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography. "Journal of Crystal Growth", v. 353 (n. 1); pp. 1-4. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2011.11.069,.

Description

Title: Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
Author/s:
  • Bengoechea Encabo, Ana
  • Steven, Albert
  • Sánchez García, Miguel Angel
  • López, L.L.
  • Estradé, S.
  • Rebled, J.M.
  • Peiró, F.
  • Nataf, G.
  • Mierry, P. de
  • Zuniga Perez, J.
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: August 2012
ISSN: 0022-0248
Volume: 353
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a-plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c-plane

More information

Item ID: 11868
DC Identifier: http://oa.upm.es/11868/
OAI Identifier: oai:oa.upm.es:11868
DOI: 10.1016/j.jcrysgro.2011.11.069,
Deposited by: Memoria Investigacion
Deposited on: 27 Sep 2012 09:01
Last Modified: 21 Apr 2016 11:03
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