Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors

Tadjer, Marko Jak and Martin Horcajo, Sara and Calle Gómez, Fernando and Anderson, Travis J. and Cuerdo Bragado, Roberto and Hobart, Karl D. (2011). Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors. "Physica status solidi c" ; pp. 1-3. ISSN 1862-6351. https://doi.org/10.1002/pssc.201001102.

Description

Title: Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
Author/s:
  • Tadjer, Marko Jak
  • Martin Horcajo, Sara
  • Calle Gómez, Fernando
  • Anderson, Travis J.
  • Cuerdo Bragado, Roberto
  • Hobart, Karl D.
Item Type: Article
Título de Revista/Publicación: Physica status solidi c
Date: 2011
ISSN: 1862-6351
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Relacionado con línea de investigación del GDS del ISOM ver http://www.isom.upm.es/dsemiconductores.php

More information

Item ID: 11895
DC Identifier: http://oa.upm.es/11895/
OAI Identifier: oai:oa.upm.es:11895
DOI: 10.1002/pssc.201001102
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssc.201001102/abstract
Deposited by: Memoria Investigacion
Deposited on: 07 Mar 2013 08:07
Last Modified: 22 Sep 2014 10:52
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