Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

Malinowski, Pawel E. and Duboz, Jean-Yves and Moor, Piet de and Minoglou, Kyriaki and John, Joachim and Horcajo, Sara Martin and Semond, Fabrice and Frayssinet, Eric and Verhoeve, Peter and Esposito, Marco and Giordanengo, Boris and BenMoussa, Ali and Mertens, Robert and Van Hoof, Chris (2011). Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes. "Applied Physics Letters", v. 98 (n. 14); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3576914.

Description

Title: Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
Author/s:
  • Malinowski, Pawel E.
  • Duboz, Jean-Yves
  • Moor, Piet de
  • Minoglou, Kyriaki
  • John, Joachim
  • Horcajo, Sara Martin
  • Semond, Fabrice
  • Frayssinet, Eric
  • Verhoeve, Peter
  • Esposito, Marco
  • Giordanengo, Boris
  • BenMoussa, Ali
  • Mertens, Robert
  • Van Hoof, Chris
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: 2011
ISSN: 0003-6951
Volume: 98
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection

More information

Item ID: 11918
DC Identifier: http://oa.upm.es/11918/
OAI Identifier: oai:oa.upm.es:11918
DOI: 10.1063/1.3576914
Deposited by: Memoria Investigacion
Deposited on: 01 Oct 2012 09:14
Last Modified: 21 Apr 2016 11:06
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