Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing

Hofstetter, Jasmin and Lelievre, Jean Francoise and Fenning, David P. and Bertoni, Mariana I. and Buonassisi, Tonio and Luque López, Antonio and Cañizo Nadal, Carlos del (2011). Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing. "Physica Status Solidi (c)", v. 8 (n. 3); pp. 759-762. ISSN 1610-1642. https://doi.org/10.1002/pssc.201000334.

Description

Title: Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing
Author/s:
  • Hofstetter, Jasmin
  • Lelievre, Jean Francoise
  • Fenning, David P.
  • Bertoni, Mariana I.
  • Buonassisi, Tonio
  • Luque López, Antonio
  • Cañizo Nadal, Carlos del
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi (c)
Date: 2011
ISSN: 1610-1642
Volume: 8
Subjects:
Freetext Keywords: P gettering;simulation;silicon solar cells;defect engineering
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The introduction of a low-temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe-contaminated Si wafers for different annealing durations. Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short-tail extended P diffusion gettering is included in an industrial fabrication process.

More information

Item ID: 11942
DC Identifier: http://oa.upm.es/11942/
OAI Identifier: oai:oa.upm.es:11942
DOI: 10.1002/pssc.201000334
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000334/abstract
Deposited by: Memoria Investigacion
Deposited on: 07 Mar 2013 08:01
Last Modified: 22 Sep 2014 10:52
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