Nanotechnology for more efficient photovoltaics: the quantum dot intermediate band solar cell

Luque López, Antonio (2011). Nanotechnology for more efficient photovoltaics: the quantum dot intermediate band solar cell. In: "Trends in Nanoapplications Energy 2011, TNA 2011", 11/04/2011 - 13/04/2011, Bilbao, España.

Description

Title: Nanotechnology for more efficient photovoltaics: the quantum dot intermediate band solar cell
Author/s:
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: Trends in Nanoapplications Energy 2011, TNA 2011
Event Dates: 11/04/2011 - 13/04/2011
Event Location: Bilbao, España
Title of Book: Proceedings of the Trends in Nanoapplications Energy 2011, TNA 2011
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (146kB) | Preview

Abstract

The intermediate band solar cell [1] has been proposed as a concept able to substantially enhance the efficiency limit of an ordinary single junction solar cell. If a band permitted for electrons is inserted within the forbidden band of a semiconductor then a novel path for photo generation is open: electron hole pairs may be formed by the successive absorption of two sub band gap photons using the intermediate band (IB) as a stepping stone. While the increase of the photovoltaic (PV) current is not a big achievement —it suffices to reduce the band gap— the achievement of this extra current at high voltage is the key of the IB concept. In ordinary cells the voltage is limited by the band gap so that reducing it would also reduce the band gap. In the intermediate band solar cell the high voltage is produced when the IB is permitted to have a Quasi Fermi Level (QFL) different from those of the Conduction Band (CB) and the Valence Band (VB). For it the cell must be properly isolated from the external contacts, which is achieved by putting the IB material between two n- and p-type ordinary semiconductors [2]. Efficiency thermodynamic limit of 63% is obtained for the IB solar cell1 vs. the 40% obtained [3] for ordinary single junction solar cells. Detailed information about the IB solar cells can be found elsewhere [4].

More information

Item ID: 12000
DC Identifier: http://oa.upm.es/12000/
OAI Identifier: oai:oa.upm.es:12000
Official URL: http://www.imaginenano.com/SCIENCE/Scienceconferences_TNAEnergy.php
Deposited by: Memoria Investigacion
Deposited on: 19 Sep 2012 12:34
Last Modified: 21 Apr 2016 11:10
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM