Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

Fernández González, Alvaro de Guzmán; San Román, Rocio y Hierro Cano, Adrián (2011). Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth. "Journal of Crystal Growth", v. 323 (n. 1); pp. 496-500. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2010.10.159.

Descripción

Título: Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth
Autor/es:
  • Fernández González, Alvaro de Guzmán
  • San Román, Rocio
  • Hierro Cano, Adrián
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Crystal Growth
Fecha: Mayo 2011
Volumen: 323
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

Más información

ID de Registro: 12058
Identificador DC: http://oa.upm.es/12058/
Identificador OAI: oai:oa.upm.es:12058
Identificador DOI: 10.1016/j.jcrysgro.2010.10.159
Depositado por: Memoria Investigacion
Depositado el: 14 Sep 2012 10:54
Ultima Modificación: 21 Abr 2016 11:13
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