Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

Fernández González, Alvaro de Guzmán and San Román, Rocio and Hierro Cano, Adrián (2011). Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth. "Journal of Crystal Growth", v. 323 (n. 1); pp. 496-500. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2010.10.159.

Description

Title: Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth
Author/s:
  • Fernández González, Alvaro de Guzmán
  • San Román, Rocio
  • Hierro Cano, Adrián
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: May 2011
ISSN: 0022-0248
Volume: 323
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

More information

Item ID: 12058
DC Identifier: http://oa.upm.es/12058/
OAI Identifier: oai:oa.upm.es:12058
DOI: 10.1016/j.jcrysgro.2010.10.159
Deposited by: Memoria Investigacion
Deposited on: 14 Sep 2012 10:54
Last Modified: 21 Apr 2016 11:13
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