Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

Capilla Osorio, José and Olivares Roza, Jimena and Clement Lorenzo, Marta and Felmetsger, Valeriy and Devos, Arnaud (2011). Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators. In: "IEEE International Ultrasonics Symposium 2011", 18/10/2011 - 21/10/2011, Orlando, EE. UU.. pp. 1704-1707. https://doi.org/10.1109/ULTSYM.2011.0425.

Description

Title: Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators
Author/s:
  • Capilla Osorio, José
  • Olivares Roza, Jimena
  • Clement Lorenzo, Marta
  • Felmetsger, Valeriy
  • Devos, Arnaud
Item Type: Presentation at Congress or Conference (Article)
Event Title: IEEE International Ultrasonics Symposium 2011
Event Dates: 18/10/2011 - 21/10/2011
Event Location: Orlando, EE. UU.
Title of Book: Proceedings of IEEE International Ultrasonics Symposium 2011
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

More information

Item ID: 12634
DC Identifier: http://oa.upm.es/12634/
OAI Identifier: oai:oa.upm.es:12634
DOI: 10.1109/ULTSYM.2011.0425
Official URL: http://ewh.ieee.org/conf/ius_2011/IUS2011/technical_program/papers/paper_submission.html
Deposited by: Memoria Investigacion
Deposited on: 01 Aug 2012 11:50
Last Modified: 21 Apr 2016 11:54
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