Growth of AlN oriented films on insulating substrates.

Olivares Roza, Jimena and Capilla Osorio, José and Clement Lorenzo, Marta and Sangrador García, Jesús and Iborra Grau, Enrique (2011). Growth of AlN oriented films on insulating substrates.. In: "IEEE International Ultrasonics Symposium 2011", 18/10/2011 - 21/10/2011, Orlando, EEUU. pp. 1716-1719. https://doi.org/10.1109/ULTSYM.2011.0428.

Description

Title: Growth of AlN oriented films on insulating substrates.
Author/s:
  • Olivares Roza, Jimena
  • Capilla Osorio, José
  • Clement Lorenzo, Marta
  • Sangrador García, Jesús
  • Iborra Grau, Enrique
Item Type: Presentation at Congress or Conference (Article)
Event Title: IEEE International Ultrasonics Symposium 2011
Event Dates: 18/10/2011 - 21/10/2011
Event Location: Orlando, EEUU
Title of Book: Proceedings of IEEE International Ultrasonics Symposium 2011
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

More information

Item ID: 12636
DC Identifier: http://oa.upm.es/12636/
OAI Identifier: oai:oa.upm.es:12636
DOI: 10.1109/ULTSYM.2011.0428
Official URL: http://ewh.ieee.org/conf/ius_2011/IUS2011/technical_program/papers/paper_submission.html
Deposited by: Memoria Investigacion
Deposited on: 01 Aug 2012 11:40
Last Modified: 21 Apr 2016 11:54
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