Free-form Fresnel RXI-RR Köhler design for high-concentration photovoltaics with spectrum-splitting

Buljan, Marina; Benitez Gimenez, Pablo; Mohedano del Pozo, Raúl; Miñano Dominguez, Juan Carlos; Sun, Y.; Falicoff, W.; Vilaplana, J.; Chaves, Julio; Biot Marí, Guillermo y López, J. (2011). Free-form Fresnel RXI-RR Köhler design for high-concentration photovoltaics with spectrum-splitting. En: "Nonimaging Optics: Efficient Design for Illumination and Solar Concentration VIII", 21/08/2011 - 22/08/2011, San Diego, EEUU.

Descripción

Título: Free-form Fresnel RXI-RR Köhler design for high-concentration photovoltaics with spectrum-splitting
Autor/es:
  • Buljan, Marina
  • Benitez Gimenez, Pablo
  • Mohedano del Pozo, Raúl
  • Miñano Dominguez, Juan Carlos
  • Sun, Y.
  • Falicoff, W.
  • Vilaplana, J.
  • Chaves, Julio
  • Biot Marí, Guillermo
  • López, J.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: Nonimaging Optics: Efficient Design for Illumination and Solar Concentration VIII
Fechas del Evento: 21/08/2011 - 22/08/2011
Lugar del Evento: San Diego, EEUU
Título del Libro: Proceedings of Nonimaging Optics: Efficient Design for Illumination and Solar Concentration VIII
Fecha: 2011
Volumen: 8124
Materias:
Escuela: Centro de Domótica Integral (CeDInt) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Development of a novel HCPV nonimaging concentrator with high concentration (>500x) and built-in spectrum splitting concept is presented. It uses the combination of a commercial concentration GaInP/GaInAs/Ge 3J cell and a concentration Back-Point-Contact (BPC) silicon cell for efficient spectral utilization, and external confinement techniques for recovering the 3J cell's reflection. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free-form RXI-type concentrator with a band-pass filter embedded in it - Both the POE and SOE performing Köhler integration to produce light homogenization on the receiver. The band-pass filter transmits the IR photons in the 900-1200 nm band to the silicon cell. A design target of an "equivalent" cell efficiency ~46% is predicted using commercial 39% 3J and 26% Si cells. A projected CPV module efficiency of greater than 38% is achievable at a concentration level larger than 500X with a wide acceptance angle of ±1°. A first proof-of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ~100x and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J cell with a peak efficiency of 36.9%.

Más información

ID de Registro: 12863
Identificador DC: http://oa.upm.es/12863/
Identificador OAI: oai:oa.upm.es:12863
URL Oficial: http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1341500
Depositado por: Memoria Investigacion
Depositado el: 13 Nov 2012 09:48
Ultima Modificación: 21 Abr 2016 12:11
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