Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted

Bengoechea Encabo, Ana and Albert, Steven and Barbagini, Francesca and Lefebvre, P. and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim (2011). Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted. In: "9th International Conference on Nitride Semiconductors - ICNS9", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Description

Title: Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted
Author/s:
  • Bengoechea Encabo, Ana
  • Albert, Steven
  • Barbagini, Francesca
  • Lefebvre, P.
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
  • Luna García de la Infanta, Esperanza
  • Trampert, Achim
Item Type: Presentation at Congress or Conference (Other)
Event Title: 9th International Conference on Nitride Semiconductors - ICNS9
Event Dates: 10/07/2011 - 15/07/2011
Event Location: Glasgow, UK
Title of Book: Proceeings of 9th International Conference on Nitride Semiconductors - ICNS9
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2].

More information

Item ID: 12867
DC Identifier: http://oa.upm.es/12867/
OAI Identifier: oai:oa.upm.es:12867
Official URL: http://www.icns9.org/
Deposited by: Memoria Investigacion
Deposited on: 26 Feb 2013 09:51
Last Modified: 21 Apr 2016 12:11
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