Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs

Martin Horcajo, Sara and Tadjer, Marko Jak and Romero Rojo, Fátima and Cuerdo Bragado, Roberto and Calle Gómez, Fernando (2011). Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs. In: "8th Spanish Conference on Electron Devices, CDE'2011", 08/02/2011 - 11/02/2011, Palma de Mallorca, España. ISBN 978-1-4244-7863-7. pp..

Description

Title: Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs
Author/s:
  • Martin Horcajo, Sara
  • Tadjer, Marko Jak
  • Romero Rojo, Fátima
  • Cuerdo Bragado, Roberto
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Article)
Event Title: 8th Spanish Conference on Electron Devices, CDE'2011
Event Dates: 08/02/2011 - 11/02/2011
Event Location: Palma de Mallorca, España
Title of Book: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
Date: 2011
ISBN: 978-1-4244-7863-7
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (149kB) | Preview

Abstract

Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the ID and gm levels. DC characterization at high temperature has demonstrated that ID and gm decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.

More information

Item ID: 12913
DC Identifier: http://oa.upm.es/12913/
OAI Identifier: oai:oa.upm.es:12913
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5744183
Deposited by: Memoria Investigacion
Deposited on: 12 Dec 2012 18:11
Last Modified: 21 Apr 2016 12:14
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM