Evidence of charge carrier number fluctuations in InN thin films?

Rani Mutta, Geeta; Guillet, Bruno; Mechim, Laurence; Vilalta Clemente, Arantxa; Grandal Quintana, Javier; Sánchez García, Miguel Angel; Martin Horcajo, Sara y Calle Gómez, Fernando (2011). Evidence of charge carrier number fluctuations in InN thin films?. En: "21st International Conference on Noise and Fluctuations", 12/06/2011 - 16/06/2011, Toronto, EEUU. ISBN 978-1-4577-0189-4. pp..

Descripción

Título: Evidence of charge carrier number fluctuations in InN thin films?
Autor/es:
  • Rani Mutta, Geeta
  • Guillet, Bruno
  • Mechim, Laurence
  • Vilalta Clemente, Arantxa
  • Grandal Quintana, Javier
  • Sánchez García, Miguel Angel
  • Martin Horcajo, Sara
  • Calle Gómez, Fernando
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 21st International Conference on Noise and Fluctuations
Fechas del Evento: 12/06/2011 - 16/06/2011
Lugar del Evento: Toronto, EEUU
Título del Libro: Proceedings of 21st International Conference on Noise and Fluctuations
Fecha: 2011
ISBN: 978-1-4577-0189-4
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Due to its small band-gap and its high mobility, InN is a promising material for a large number of key applications like band-gap engineering for high efficiency solar cells, light emitting diodes, and high speed devices. Unfortunately, it has been reported that this material exhibits strong surface charge accumulation which may depend on the type of surface. Current investigations are conducted in order to explain the mechanisms which govern such a behavior and to look for ways of avoiding it and/or finding applications that may use such an effect. In this framework, low frequency noise measurements have been performed at different temperatures on patterned MBE grown InN layers. The evolution of the 1/f noise level with temperature in the 77 K-300 K range is consistent with carrier number fluctuations thus indicating surface mechanisms: the surface charge accumulation is confirmed by the noise measurements.

Más información

ID de Registro: 12919
Identificador DC: http://oa.upm.es/12919/
Identificador OAI: oai:oa.upm.es:12919
URL Oficial: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5994375
Depositado por: Memoria Investigacion
Depositado el: 12 Dic 2012 17:51
Ultima Modificación: 21 Abr 2016 12:14
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