Synthesis and characterization of GaAsSb-capped InAs-based QDIPs

Yamamoto, K. and Ulloa Herrero, José María and Hierro Cano, Adrián and Fernández González, Alvaro de Guzmán (2011). Synthesis and characterization of GaAsSb-capped InAs-based QDIPs. In: "38th International Symposium on Compound Semiconductors (ISCS)", 22/05/2011 - 26/05/2011, Berlin, Alemania. pp..

Description

Title: Synthesis and characterization of GaAsSb-capped InAs-based QDIPs
Author/s:
  • Yamamoto, K.
  • Ulloa Herrero, José María
  • Hierro Cano, Adrián
  • Fernández González, Alvaro de Guzmán
Item Type: Presentation at Congress or Conference (Poster)
Event Title: 38th International Symposium on Compound Semiconductors (ISCS)
Event Dates: 22/05/2011 - 26/05/2011
Event Location: Berlin, Alemania
Title of Book: Proceedings of 38th International Symposium on Compound Semiconductors (ISCS)
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Quantum dot infrared photodetectors (QDIPs) are very attractive for infrared imaging applications due to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high quality active region which requires a structural optimization of the nanostructures. With using GaAsSb capping layer, the optical properties, such as the PL intensity and its full width at half maximum (FWHM), of InAs QDs have been improved in the range between 1.15 and 1.5 m, because of the reduction of the compressive strain in QDs and the increment of QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponse spectra from GaAsSb-capped InAs-based QDIPs

More information

Item ID: 12948
DC Identifier: http://oa.upm.es/12948/
OAI Identifier: oai:oa.upm.es:12948
Deposited by: Memoria Investigacion
Deposited on: 07 Nov 2012 11:26
Last Modified: 21 Apr 2016 12:15
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