Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots

Ulloa Herrero, José María and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián and Yamamoto, K. (2011). Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots. In: "Proceedings Spanish-Japanese Workshop 2011", 14/09/2011 - 16/09/2011, Toledo (Spain) 2011. pp..

Description

Title: Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots
Author/s:
  • Ulloa Herrero, José María
  • Fernández González, Alvaro de Guzmán
  • Hierro Cano, Adrián
  • Yamamoto, K.
Item Type: Presentation at Congress or Conference (Other)
Event Title: Proceedings Spanish-Japanese Workshop 2011
Event Dates: 14/09/2011 - 16/09/2011
Event Location: Toledo (Spain) 2011
Title of Book: Proceedings Spanish-Japanese Workshop 2011
Date: 2011
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Quantum dot infrared photodetectors (QDIPs) are very attractive for many applications such as infrared imaging, remote sensing and gas sensing, thanks to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high-quality active region which requires an optimization of the nanostructure. By using GaAsSb capping layer, InAs QDs have improved their optical emission in the range between 1.15 and 1.3 m (at Sb composition of 14 %), due to a reduction of a compressive strain in QD and an increment of a QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponses at ~ 5 m from GaAsSb-capped InAs/GaAs QDIPs under normal light-incidence.

More information

Item ID: 12950
DC Identifier: http://oa.upm.es/12950/
OAI Identifier: oai:oa.upm.es:12950
Deposited by: Memoria Investigacion
Deposited on: 29 Jan 2013 08:33
Last Modified: 21 Apr 2016 12:16
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