Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Reyes, D.F.; Sales, D.L.; Gargallo Caballero, Raquel; Ulloa Herrero, José María; Hierro Cano, Adrián; Fernández González, Alvaro de Guzmán; Garcia, R. y Gonzalez, D. (2011). Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots. En: "17th International Conference on Microscopy of Semiconducting Materials 2011", 04/04/2011 - 07/04/2011, Cambridge, UK. pp..

Descripción

Título: Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
Autor/es:
  • Reyes, D.F.
  • Sales, D.L.
  • Gargallo Caballero, Raquel
  • Ulloa Herrero, José María
  • Hierro Cano, Adrián
  • Fernández González, Alvaro de Guzmán
  • Garcia, R.
  • Gonzalez, D.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 17th International Conference on Microscopy of Semiconducting Materials 2011
Fechas del Evento: 04/04/2011 - 07/04/2011
Lugar del Evento: Cambridge, UK
Título del Libro: Journal of Physics: Conference Series
Fecha: 2011
Volumen: 326
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (422kB) | Vista Previa

Resumen

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

Más información

ID de Registro: 13012
Identificador DC: http://oa.upm.es/13012/
Identificador OAI: oai:oa.upm.es:13012
URL Oficial: http://iopscience.iop.org/1742-6596/326/1/012049
Depositado por: Memoria Investigacion
Depositado el: 07 Nov 2012 09:28
Ultima Modificación: 21 Abr 2016 12:19
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM