Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Reyes, D.F. and Sales, D.L. and Gargallo Caballero, Raquel and Ulloa Herrero, José María and Hierro Cano, Adrián and Fernández González, Alvaro de Guzmán and Garcia, R. and Gonzalez, D. (2011). Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots. In: "17th International Conference on Microscopy of Semiconducting Materials 2011", 04/04/2011 - 07/04/2011, Cambridge, UK. pp..

Description

Title: Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
Author/s:
  • Reyes, D.F.
  • Sales, D.L.
  • Gargallo Caballero, Raquel
  • Ulloa Herrero, José María
  • Hierro Cano, Adrián
  • Fernández González, Alvaro de Guzmán
  • Garcia, R.
  • Gonzalez, D.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 17th International Conference on Microscopy of Semiconducting Materials 2011
Event Dates: 04/04/2011 - 07/04/2011
Event Location: Cambridge, UK
Title of Book: Journal of Physics: Conference Series
Date: 2011
Volume: 326
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

More information

Item ID: 13012
DC Identifier: http://oa.upm.es/13012/
OAI Identifier: oai:oa.upm.es:13012
Official URL: http://iopscience.iop.org/1742-6596/326/1/012049
Deposited by: Memoria Investigacion
Deposited on: 07 Nov 2012 09:28
Last Modified: 21 Apr 2016 12:19
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