Study of the Mechanical Strength Improvement of Wafers for EWT Solar Cells by Chemical Etching after the Drilling Process

Cueto Felgueroso, Gema; Barredo Egusquiza, Josu; Cereceda, Eneko y Hermanns, Lutz Karl Heinz (2011). Study of the Mechanical Strength Improvement of Wafers for EWT Solar Cells by Chemical Etching after the Drilling Process. En: "26th European Photovoltaic Solar Energy ConferenceProceedings of the International Conferenceheld in Hamburg, Germany5 - 9 September 2011", 05/09/2011 - 09/09/2011, Hamburgo, Alemania. ISBN 3-936338-27-2. pp. 1589-1592. https://doi.org/10.4229/26thEUPVSEC2011-2BV.2.56.

Descripción

Título: Study of the Mechanical Strength Improvement of Wafers for EWT Solar Cells by Chemical Etching after the Drilling Process
Autor/es:
  • Cueto Felgueroso, Gema
  • Barredo Egusquiza, Josu
  • Cereceda, Eneko
  • Hermanns, Lutz Karl Heinz
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 26th European Photovoltaic Solar Energy ConferenceProceedings of the International Conferenceheld in Hamburg, Germany5 - 9 September 2011
Fechas del Evento: 05/09/2011 - 09/09/2011
Lugar del Evento: Hamburgo, Alemania
Título del Libro: Proceeding of 26th European Photovoltaic Solar Energy ConferenceProceedings of the International Conferenceheld in Hamburg, Germany5 - 9 September 2011
Fecha: 2011
ISBN: 3-936338-27-2
Materias:
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Mecánica Estructural y Construcciones Industriales [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Mechanical stability of EWT solar cells deteriorates when holes are created in the wafer. Nevertheless, the chemical etching after the hole generation process improves the mechanical strength by removing part of the damage produced in the drilling process. Several sets of wafers with alkaline baths of different duration have been prepared. The mechanical strength has been measured by the ring on ring bending test and the failure stresses have been obtained through a FE simulation of the test. This paper shows the comparison of these groups of wafers in order to obtain an optimum value of the decreased thickness produced by the chemical etching

Más información

ID de Registro: 13101
Identificador DC: http://oa.upm.es/13101/
Identificador OAI: oai:oa.upm.es:13101
Identificador DOI: 10.4229/26thEUPVSEC2011-2BV.2.56
URL Oficial: http://www.eupvsec-proceedings.com/proceedings?paper=14814
Depositado por: Memoria Investigacion
Depositado el: 30 Nov 2012 11:10
Ultima Modificación: 21 Abr 2016 12:24
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