Study of the Mechanical Strength Improvement of Wafers for EWT Solar Cells by Chemical Etching after the Drilling Process

Cueto Felgueroso, Gema and Barredo Egusquiza, Josu and Cereceda, Eneko and Hermanns, Lutz Karl Heinz (2011). Study of the Mechanical Strength Improvement of Wafers for EWT Solar Cells by Chemical Etching after the Drilling Process. In: "26th European Photovoltaic Solar Energy ConferenceProceedings of the International Conferenceheld in Hamburg, Germany5 - 9 September 2011", 05/09/2011 - 09/09/2011, Hamburgo, Alemania. ISBN 3-936338-27-2. pp. 1589-1592. https://doi.org/10.4229/26thEUPVSEC2011-2BV.2.56.

Description

Title: Study of the Mechanical Strength Improvement of Wafers for EWT Solar Cells by Chemical Etching after the Drilling Process
Author/s:
  • Cueto Felgueroso, Gema
  • Barredo Egusquiza, Josu
  • Cereceda, Eneko
  • Hermanns, Lutz Karl Heinz
Item Type: Presentation at Congress or Conference (Article)
Event Title: 26th European Photovoltaic Solar Energy ConferenceProceedings of the International Conferenceheld in Hamburg, Germany5 - 9 September 2011
Event Dates: 05/09/2011 - 09/09/2011
Event Location: Hamburgo, Alemania
Title of Book: Proceeding of 26th European Photovoltaic Solar Energy ConferenceProceedings of the International Conferenceheld in Hamburg, Germany5 - 9 September 2011
Date: 2011
ISBN: 3-936338-27-2
Subjects:
Faculty: E.T.S.I. Industriales (UPM)
Department: Mecánica Estructural y Construcciones Industriales [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Mechanical stability of EWT solar cells deteriorates when holes are created in the wafer. Nevertheless, the chemical etching after the hole generation process improves the mechanical strength by removing part of the damage produced in the drilling process. Several sets of wafers with alkaline baths of different duration have been prepared. The mechanical strength has been measured by the ring on ring bending test and the failure stresses have been obtained through a FE simulation of the test. This paper shows the comparison of these groups of wafers in order to obtain an optimum value of the decreased thickness produced by the chemical etching

More information

Item ID: 13101
DC Identifier: http://oa.upm.es/13101/
OAI Identifier: oai:oa.upm.es:13101
DOI: 10.4229/26thEUPVSEC2011-2BV.2.56
Official URL: http://www.eupvsec-proceedings.com/proceedings?paper=14814
Deposited by: Memoria Investigacion
Deposited on: 30 Nov 2012 11:10
Last Modified: 21 Apr 2016 12:24
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