Analysis of the Mechanical Properties of Multicrystalline and Monocrystalline Silicon Wafers Manufactured by Casting Methods

Barredo Egusquiza, Josu; Hermanns, Lutz Karl Heinz; Fraile de Lerma, Alberto; Miranda, Miguel; Guerrero, Ismael y Parra, Vicente (2011). Analysis of the Mechanical Properties of Multicrystalline and Monocrystalline Silicon Wafers Manufactured by Casting Methods. En: "5th International Workshop on Crystalline Silicon solar Cells", 01/11/2011 - 03/11/2011, Boston, MA, EEUU. pp..

Descripción

Título: Analysis of the Mechanical Properties of Multicrystalline and Monocrystalline Silicon Wafers Manufactured by Casting Methods
Autor/es:
  • Barredo Egusquiza, Josu
  • Hermanns, Lutz Karl Heinz
  • Fraile de Lerma, Alberto
  • Miranda, Miguel
  • Guerrero, Ismael
  • Parra, Vicente
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 5th International Workshop on Crystalline Silicon solar Cells
Fechas del Evento: 01/11/2011 - 03/11/2011
Lugar del Evento: Boston, MA, EEUU
Título del Libro: Proceedings of 5th International Workshop on Crystalline Silicon solar Cells
Fecha: 2011
Materias:
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Mecánica Estructural y Construcciones Industriales [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Quasi-monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favourable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost and the full square-shape of the multicrystalline ones. However, the quasi-mono ingot growth can lead to a different defect structure than the typical Cz-Si process. Thus, the properties of the brand-new quasi-mono wafers, from a mechanical point of view, have been for the first time studied, comparing their strength with that of both Cz-Si mono and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. High mechanical strength was found in all the cases. The low quality quasi-mono wafers, interestingly, did not exhibit critical strength values for the PV industry, despite their noticeable density of extended defects.

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ID de Registro: 13152
Identificador DC: http://oa.upm.es/13152/
Identificador OAI: oai:oa.upm.es:13152
Depositado por: Memoria Investigacion
Depositado el: 29 Nov 2012 12:23
Ultima Modificación: 21 Abr 2016 12:27
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