Individualization and Electrical Characterization of SiGe Nanowires

Monasterio, Manuel and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás and Ballesteros Pérez, Carmen Inés (2011). Individualization and Electrical Characterization of SiGe Nanowires. In: "Materials Research Society Symposium 2011", 28/11/2011 - 02/12/2011, Boston, MA, EEUU. pp. 1-6. https://doi.org/10.1557/opl.2012.33.

Description

Title: Individualization and Electrical Characterization of SiGe Nanowires
Author/s:
  • Monasterio, Manuel
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
  • Ballesteros Pérez, Carmen Inés
Item Type: Presentation at Congress or Conference (Article)
Event Title: Materials Research Society Symposium 2011
Event Dates: 28/11/2011 - 02/12/2011
Event Location: Boston, MA, EEUU
Title of Book: Proceedings of Materials Research Society Symposium 2011
Date: 2011
Volume: 1408
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective

More information

Item ID: 13243
DC Identifier: http://oa.upm.es/13243/
OAI Identifier: oai:oa.upm.es:13243
DOI: 10.1557/opl.2012.33
Deposited by: Memoria Investigacion
Deposited on: 29 Nov 2012 08:31
Last Modified: 21 Apr 2016 12:33
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