Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks

Calleja Pardo, Enrique and Bengoechea Encabo, Ana and Albert, Steven and Sánchez García, Miguel Angel and Barbagini, Francesca and Luna, E. and Trampert, Achim and Jahn, U. and Lefebvre, F. (2011). Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks. In: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.

Description

Title: Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks
Author/s:
  • Calleja Pardo, Enrique
  • Bengoechea Encabo, Ana
  • Albert, Steven
  • Sánchez García, Miguel Angel
  • Barbagini, Francesca
  • Luna, E.
  • Trampert, Achim
  • Jahn, U.
  • Lefebvre, F.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
Event Dates: 16/03/2011 - 18/03/2011
Event Location: Granada, España
Title of Book: Proceedings of 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

•Self- assembled Ga(In)N Nanorods and Nanostructures •Ordered growth of GaN Nanorods: masks issues •Ordered growth of GaN Nanorods: mechanisms •White NanoLEDs

More information

Item ID: 13538
DC Identifier: http://oa.upm.es/13538/
OAI Identifier: oai:oa.upm.es:13538
Official URL: http://www.isom.upm.es/GeJpSp2011/index.html
Deposited by: Memoria Investigacion
Deposited on: 22 Nov 2012 10:41
Last Modified: 21 Apr 2016 12:51
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