High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs

Martin Horcajo, Sara and Tadjer, Marko Jak and Di Forte Poisson, M-A. and Sarazin, N. and Morvan, E. and Dua, C. and Cuerdo Bragado, Roberto and Calle Gómez, Fernando (2011). High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs. In: "9th International Conference on Nitride Semiconductors", 10/07/2012 - 15/07/2012, Glasgow (UK),. pp..

Description

Title: High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs
Author/s:
  • Martin Horcajo, Sara
  • Tadjer, Marko Jak
  • Di Forte Poisson, M-A.
  • Sarazin, N.
  • Morvan, E.
  • Dua, C.
  • Cuerdo Bragado, Roberto
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Other)
Event Title: 9th International Conference on Nitride Semiconductors
Event Dates: 10/07/2012 - 15/07/2012
Event Location: Glasgow (UK),
Title of Book: 9th International Conference on Nitride Semiconductors
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature.

More information

Item ID: 13578
DC Identifier: http://oa.upm.es/13578/
OAI Identifier: oai:oa.upm.es:13578
Deposited by: Memoria Investigacion
Deposited on: 25 Feb 2013 10:59
Last Modified: 21 Apr 2016 12:54
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