Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy

Eljarrat, A. and Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Magén, C. and Estradé, S. and Peiró, F. (2011). Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy. In: "2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies", 18/10/2011 - 21/10/2012, Aveiro, Portugal. pp. 1-3.

Description

Title: Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy
Author/s:
  • Eljarrat, A.
  • Gacevic, Zarko
  • Fernández-Garrido, Sergio
  • Calleja Pardo, Enrique
  • Magén, C.
  • Estradé, S.
  • Peiró, F.
Item Type: Presentation at Congress or Conference (Poster)
Event Title: 2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies
Event Dates: 18/10/2011 - 21/10/2012
Event Location: Aveiro, Portugal
Title of Book: Proceedings of 2nd Joint Congress Of The Portuguese And Spanish Microscopy Societies
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview

Abstract

Molecular beam epitaxy growth of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs) with peak reflectivity centered around 400nm is reported including optical and transmission electron microscopy (TEM) measurements [1]. Good periodicity heterostructures with crack-free surfaces were confirmed, but, also a significant residual optical absorption below the bandgap was measured. The TEM characterization ascribes the origin of this problem to polymorfism and planar defects in the GaN layers and to the existence of an In-rich layer at the InAlN/GaN interfaces. In this work, several TEM based techniques have been combined.

More information

Item ID: 13580
DC Identifier: http://oa.upm.es/13580/
OAI Identifier: oai:oa.upm.es:13580
Deposited by: Memoria Investigacion
Deposited on: 21 Nov 2012 12:53
Last Modified: 21 Apr 2016 12:54
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM