Growth and characterization of InGaN/GaN quantum dots for violet/blue applications

Gacevic, Zarko and Lefebvre, P. and Calleja Pardo, Enrique and Bertram, F. and Schmidt, G. and Veit, P. and Christen, J. (2011). Growth and characterization of InGaN/GaN quantum dots for violet/blue applications. In: "International Conference on Nitride Semiconductors 2011", 10/07/2011 - 15/07/2011, Glasgow, UK. pp. 1-3.

Description

Title: Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
Author/s:
  • Gacevic, Zarko
  • Lefebvre, P.
  • Calleja Pardo, Enrique
  • Bertram, F.
  • Schmidt, G.
  • Veit, P.
  • Christen, J.
Item Type: Presentation at Congress or Conference (Article)
Event Title: International Conference on Nitride Semiconductors 2011
Event Dates: 10/07/2011 - 15/07/2011
Event Location: Glasgow, UK
Title of Book: Proceedings International Conference on Nitride Semiconductors 2011
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We report on plasma-assisted molecular beam epitaxy growth and characterization of InGaN/GaN quantum dots (QDs) for violet/blue applications.

More information

Item ID: 13581
DC Identifier: http://oa.upm.es/13581/
OAI Identifier: oai:oa.upm.es:13581
Deposited by: Memoria Investigacion
Deposited on: 25 Feb 2013 10:01
Last Modified: 21 Apr 2016 12:54
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