Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

Sanchez Aniorte, Maria Isabel and Barrio, R. and Casado, A. and Morales Furió, Miguel and Carabe, J. and Gandia, J.J. and Molpeceres Álvarez, Carlos Luis (2012). Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts. "Applied Surface Science", v. 258 (n. 23); pp. 33-35. ISSN 0169-4332. https://doi.org/10.1016/j.apsusc.2011.09.108.

Description

Title: Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts
Author/s:
  • Sanchez Aniorte, Maria Isabel
  • Barrio, R.
  • Casado, A.
  • Morales Furió, Miguel
  • Carabe, J.
  • Gandia, J.J.
  • Molpeceres Álvarez, Carlos Luis
Item Type: Article
Título de Revista/Publicación: Applied Surface Science
Date: September 2012
ISSN: 0169-4332
Volume: 258
Subjects:
Faculty: E.T.S.I. Industriales (UPM)
Department: Física Aplicada a la Ingeniería Industrial [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

One of the key steps to achieve high efficiencies in amorphous/crystalline silicon photovoltaic structures is to design low-ohmic-resistance backcontacts with good passivation in the rear part of the cell. A well known approach to achieve this goal is to use laser-fired contact (LFC) processes in which a metal layer is fired through the dielectric to define good contacts with the semiconductor. However, and despite the fact that this approach has demonstrated to be extremely successful, there is still enough room for process improvement with an appropriate optimization. In this paper, a study focused on the optimal adjustment of the irradiation parameters to produce laser-fired contacts in a-Si:H/c-Si heterojunctionsolarcells is presented. We used samples consisting of crystalline-silicon (c-Si) wafers together with a passivation layer of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) deposited by plasma-enhanced chemical deposition (PECVD). Then, an aluminum layer was evaporated on both sides, the thickness of this layer varied from 0.2 to 1 μm in order to identify the optimal amount of Al required to create an appropriate contact. A q-switched Nd:YVO4laser source, λ = 532 nm, was used to locally fire the aluminum through the thin a-Si:H(i)-layers to form the LFC. The effects of laser fluences were analyzed using a comprehensive morphological and electrical characterization.

More information

Item ID: 13855
DC Identifier: http://oa.upm.es/13855/
OAI Identifier: oai:oa.upm.es:13855
DOI: 10.1016/j.apsusc.2011.09.108
Deposited by: Memoria Investigacion
Deposited on: 20 Nov 2012 08:32
Last Modified: 21 Aug 2017 11:39
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