Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

Sanchez Aniorte, Maria Isabel; Barrio, R.; Casado, A.; Morales Furió, Miguel; Carabe, J.; Gandia, J.J. y Molpeceres Álvarez, Carlos Luis (2012). Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts. "Applied Surface Science", v. 258 (n. 23); pp. 33-35. ISSN 0169-4332. https://doi.org/10.1016/j.apsusc.2011.09.108.

Descripción

Título: Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts
Autor/es:
  • Sanchez Aniorte, Maria Isabel
  • Barrio, R.
  • Casado, A.
  • Morales Furió, Miguel
  • Carabe, J.
  • Gandia, J.J.
  • Molpeceres Álvarez, Carlos Luis
Tipo de Documento: Artículo
Título de Revista/Publicación: Applied Surface Science
Fecha: Septiembre 2012
Volumen: 258
Materias:
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Física Aplicada a la Ingeniería Industrial [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

One of the key steps to achieve high efficiencies in amorphous/crystalline silicon photovoltaic structures is to design low-ohmic-resistance backcontacts with good passivation in the rear part of the cell. A well known approach to achieve this goal is to use laser-fired contact (LFC) processes in which a metal layer is fired through the dielectric to define good contacts with the semiconductor. However, and despite the fact that this approach has demonstrated to be extremely successful, there is still enough room for process improvement with an appropriate optimization. In this paper, a study focused on the optimal adjustment of the irradiation parameters to produce laser-fired contacts in a-Si:H/c-Si heterojunctionsolarcells is presented. We used samples consisting of crystalline-silicon (c-Si) wafers together with a passivation layer of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) deposited by plasma-enhanced chemical deposition (PECVD). Then, an aluminum layer was evaporated on both sides, the thickness of this layer varied from 0.2 to 1 μm in order to identify the optimal amount of Al required to create an appropriate contact. A q-switched Nd:YVO4laser source, λ = 532 nm, was used to locally fire the aluminum through the thin a-Si:H(i)-layers to form the LFC. The effects of laser fluences were analyzed using a comprehensive morphological and electrical characterization.

Más información

ID de Registro: 13855
Identificador DC: http://oa.upm.es/13855/
Identificador OAI: oai:oa.upm.es:13855
Identificador DOI: 10.1016/j.apsusc.2011.09.108
Depositado por: Memoria Investigacion
Depositado el: 20 Nov 2012 08:32
Ultima Modificación: 21 Ago 2017 11:39
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