Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions

Martí Vega, Antonio; Algora del Valle, Carlos y Lopez Araujo, Gerardo (1990). Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions. "Journal of Applied Physics", v. 37 (n. 5); pp. 2723-2730. ISSN 0021-8979. https://doi.org/10.1063/1.346447.

Descripción

Título: Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions
Autor/es:
  • Martí Vega, Antonio
  • Algora del Valle, Carlos
  • Lopez Araujo, Gerardo
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Applied Physics
Fecha: 1990
Volumen: 37
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work we present results of zinc diffusion in GaAs using the liquid phase epitaxy technique from liquid solutions of Ga‐As‐Zn and Ga‐As‐Al‐Zn. Using silicon‐doped n‐GaAs substrates, working at a diffusion temperature of 850 °C, and introducing a dopant concentration ranging 1018–1019 cm−3, the most important findings regarding the diffusion properties are as follows: (a) zinc concentration in the solid depends on the square root of zinc atomic fraction in the liquid; (b) the diffusion is dominated by the interstitial‐substitutional process; (c) the diffusivity D varies as about C3 in the form D=2.9×10−67C3.05; (d) aluminum plays the role of the catalyst of the diffusion process, if it is introduced in the liquid solution, since it is found that D varies as (γAsXlAs)−1; (e) the zinc interstitial is mainly doubly ionized (Zn++i); (f) the zinc diffusion coefficient in Al0.85 Ga0.15 As is about four times greater than in GaAs; (g) by means of all these results, it is possible to control zinc diffusion processes in order to obtain optimized depth junctions and doping levels in semiconductor device fabrication.

Más información

ID de Registro: 13909
Identificador DC: http://oa.upm.es/13909/
Identificador OAI: oai:oa.upm.es:13909
Identificador DOI: 10.1063/1.346447
URL Oficial: http://jap.aip.org/resource/1/japiau/v68/i6/p2723_s1?
Depositado por: Memoria Investigacion
Depositado el: 22 Feb 2013 11:14
Ultima Modificación: 21 Abr 2016 13:20
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