Capacitive load based on IGBTs for on-site characterization of PV arrays

Muñoz Cano, Javier and Lorenzo Pigueiras, Eduardo (2006). Capacitive load based on IGBTs for on-site characterization of PV arrays. "Solar Energy", v. 80 (n. 11); pp. 1489-1497. ISSN 0038-092X. https://doi.org/10.1016/j.solener.2005.09.013..

Description

Title: Capacitive load based on IGBTs for on-site characterization of PV arrays
Author/s:
  • Muñoz Cano, Javier
  • Lorenzo Pigueiras, Eduardo
Item Type: Article
Título de Revista/Publicación: Solar Energy
Date: November 2006
ISSN: 0038-092X
Volume: 80
Subjects:
Freetext Keywords: PV array; I–V characteristic; Capacitive load
Faculty: E.U.I.T. Industrial (UPM)
Department: Electrónica, Automática e Informática Industrial [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This paper describes the practical design of a portable capacitive load based on insulated gate bipolar transistors (IGBTs), which is used to measure the I–V characteristics of PV arrays with short-circuit currents up to 80 A and open circuit voltages up to 800 V. Such measurement allows on-site characterization of PV arrays under real operating conditions and also provides information for the detection of potential array anomalies, such as broken cells or defective connections. The presented I–V load is easy to reproduce and low-cost, characteristics that are within the reach of small-scale organizations involved in PV electrification projects.

More information

Item ID: 13945
DC Identifier: http://oa.upm.es/13945/
OAI Identifier: oai:oa.upm.es:13945
DOI: 10.1016/j.solener.2005.09.013.
Official URL: http://www.sciencedirect.com/science/article/pii/S0038092X06000065
Deposited by: Memoria Investigacion
Deposited on: 21 Dec 2012 11:28
Last Modified: 21 Apr 2016 13:22
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