A WKB analysis of radical growth in the hydrogen-air mixing layer

Sánchez Pérez, Antonio Luis and Liñán Martínez, Amable and Williams, F.A. (1997). A WKB analysis of radical growth in the hydrogen-air mixing layer. "Journal of Engineering Mathematics", v. 31 ; pp. 119-130. ISSN 0022-0833.

Description

Title: A WKB analysis of radical growth in the hydrogen-air mixing layer
Author/s:
  • Sánchez Pérez, Antonio Luis
  • Liñán Martínez, Amable
  • Williams, F.A.
Item Type: Article
Título de Revista/Publicación: Journal of Engineering Mathematics
Date: 1997
ISSN: 0022-0833
Volume: 31
Subjects:
Faculty: E.T.S.I. Aeronáuticos (UPM)
Department: Motopropulsión y Termofluidodinámica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The chain-branching process leading to ignition in the hydrogen-air mixing layer is studied by application of a novel WKB-like method with a four-step reduced scheme adopted for the chemistry description. Attention is restricted to initial free-stream temperatures above the crossover temperature corresponding to the second explosion limit of H2-O2 mixtures, thereby causing three-body recombination reactions to be negligible in the ignition process. It is shown that the initiation reactions, responsible for the early radical buildup, cease being important when the radical mass fractions reach values of the order of the ratio of the characteristic branching time to the characteristic initiation time, a very small quantity at temperatures of practical interest. The autocatalytic character of the chain-branching reactions causes the radical concentrations to growexponentially with downstream distance in the process that follows. It is shown that, because of the effect of radical diffusion, the radical growth rate is uniform across the mixing layer in the first approximation, with an exponent given by that of a premixed branching explosion evaluated at the location where the effective Damk¨ohler number based on the flow velocity is maximum. This exponent, as well as the leading-order representation of the radical profiles, are easily obtained by the imposition of a bounded, nonoscillatory behavior on the solution.

More information

Item ID: 1440
DC Identifier: http://oa.upm.es/1440/
OAI Identifier: oai:oa.upm.es:1440
Official URL: http://www.springerlink.com/content/100287/
Deposited by: Biblioteca ETSI Aeronauticos
Deposited on: 24 Apr 2009
Last Modified: 20 Apr 2016 06:49
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