Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Gordillo Garcia, Nuria and Gonzalez Arrabal, Raquel and Rivera de Mena, Antonio and Munnik, F. and Agullo Lopez, Fernando (2012). Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach. "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms", v. 289 ; pp. 74-78. ISSN 0168-583X. https://doi.org/10.1016/j.nimb.2012.07.034.

Description

Title: Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach
Author/s:
  • Gordillo Garcia, Nuria
  • Gonzalez Arrabal, Raquel
  • Rivera de Mena, Antonio
  • Munnik, F.
  • Agullo Lopez, Fernando
Item Type: Article
Título de Revista/Publicación: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Date: October 2012
ISSN: 0168-583X
Volume: 289
Subjects:
Freetext Keywords: Copper nitride; Ion beam modification of materials; Swift heavy ion irradiation; Electronic sputtering
Faculty: E.T.S.I. Industriales (UPM)
Department: Ingeniería Nuclear [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Nitrogen sputtering yields as high as 104 atoms/ion, are obtained by irradiating N-rich-Cu3N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10?42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5?10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (Se). A stopping power (Sth) threshold of ?3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

More information

Item ID: 15216
DC Identifier: http://oa.upm.es/15216/
OAI Identifier: oai:oa.upm.es:15216
DOI: 10.1016/j.nimb.2012.07.034
Official URL: http://www.sciencedirect.com/science/article/pii/S0168583X12004764
Deposited by: Memoria Investigacion
Deposited on: 03 Dec 2013 19:15
Last Modified: 21 Apr 2016 15:13
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