Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Gordillo Garcia, Nuria; Gonzalez Arrabal, Raquel; Rivera de Mena, Antonio; Munnik, F. y Agullo Lopez, Fernando (2012). Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach. "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms", v. 289 ; pp. 74-78. ISSN 0168-583X. https://doi.org/10.1016/j.nimb.2012.07.034.

Descripción

Título: Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach
Autor/es:
  • Gordillo Garcia, Nuria
  • Gonzalez Arrabal, Raquel
  • Rivera de Mena, Antonio
  • Munnik, F.
  • Agullo Lopez, Fernando
Tipo de Documento: Artículo
Título de Revista/Publicación: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Fecha: Octubre 2012
Volumen: 289
Materias:
Palabras Clave Informales: Copper nitride; Ion beam modification of materials; Swift heavy ion irradiation; Electronic sputtering
Escuela: E.T.S.I. Industriales (UPM)
Departamento: Ingeniería Nuclear [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Nitrogen sputtering yields as high as 104 atoms/ion, are obtained by irradiating N-rich-Cu3N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10?42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5?10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (Se). A stopping power (Sth) threshold of ?3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

Más información

ID de Registro: 15216
Identificador DC: http://oa.upm.es/15216/
Identificador OAI: oai:oa.upm.es:15216
Identificador DOI: 10.1016/j.nimb.2012.07.034
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0168583X12004764
Depositado por: Memoria Investigacion
Depositado el: 03 Dic 2013 19:15
Ultima Modificación: 21 Abr 2016 15:13
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