Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

García Vara, Iván; Rey-Stolle Prado, Ignacio y Algora del Valle, Carlos (2012). Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics. "Journal of Physics D: Applied Physics", v. 45 (n. 4); pp. 45101-45108. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/45/4/045101.

Descripción

Título: Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics
Autor/es:
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Physics D: Applied Physics
Fecha: Enero 2012
Volumen: 45
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

Más información

ID de Registro: 15404
Identificador DC: http://oa.upm.es/15404/
Identificador OAI: oai:oa.upm.es:15404
Identificador DOI: 10.1088/0022-3727/45/4/045101
URL Oficial: http://iopscience.iop.org/0022-3727/45/4/045101/article
Depositado por: Memoria Investigacion
Depositado el: 29 May 2013 16:50
Ultima Modificación: 21 Abr 2016 15:27
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