Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration

Lauzurica Santiago, Sara and García-Ballesteros Ramírez, Juan José and Colina Brito, Mónica and Sanchez Aniorte, Maria Isabel and Molpeceres Álvarez, Carlos Luis (2011). Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration. "Applied Surface Science", v. 257 (n. 12); pp. 5230-5236. ISSN 0169-4332. https://doi.org/10.1016/j.apsusc.2010.09.088.

Description

Title: Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration
Author/s:
  • Lauzurica Santiago, Sara
  • García-Ballesteros Ramírez, Juan José
  • Colina Brito, Mónica
  • Sanchez Aniorte, Maria Isabel
  • Molpeceres Álvarez, Carlos Luis
Item Type: Article
Título de Revista/Publicación: Applied Surface Science
Date: April 2011
ISSN: 0169-4332
Volume: 257
Subjects:
Freetext Keywords: Laser scribing; Selective ablation; a-Si:H
Faculty: E.T.S.I. Industriales (UPM)
Department: Física Aplicada a la Ingeniería Industrial [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysis

More information

Item ID: 15522
DC Identifier: http://oa.upm.es/15522/
OAI Identifier: oai:oa.upm.es:15522
DOI: 10.1016/j.apsusc.2010.09.088
Official URL: http://www.sciencedirect.com/science/article/pii/S0169433210013231
Deposited by: Memoria Investigacion
Deposited on: 08 Dec 2013 12:42
Last Modified: 21 Aug 2017 11:41
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