On the lateral excitation of shear modes in AlN layered resonators

Clement Lorenzo, Marta; Iborra Grau, Enrique; Olivares Roza, Jimena; Miguel Ramos, Mario de; Capilla Osorio, José y Sangrador García, Jesús (2012). On the lateral excitation of shear modes in AlN layered resonators. En: "IEEE International Ultrasonics Symposium Proceedings 2012", 7/10/2012-10/10/2012, Dresden, Germany. pp. 535-538. https://doi.org/10.1109/ULTSYM.2012.0133.

Descripción

Título: On the lateral excitation of shear modes in AlN layered resonators
Autor/es:
  • Clement Lorenzo, Marta
  • Iborra Grau, Enrique
  • Olivares Roza, Jimena
  • Miguel Ramos, Mario de
  • Capilla Osorio, José
  • Sangrador García, Jesús
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: IEEE International Ultrasonics Symposium Proceedings 2012
Fechas del Evento: 7/10/2012-10/10/2012
Lugar del Evento: Dresden, Germany
Título del Libro: On the lateral excitation of shear modes in AlN layered resonators
Título de Revista/Publicación: 2012 IEEE International Ultrasonics Symposium Proceedings
Fecha: Octubre 2012
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic (SiO2, W) and insulating (SiOC, Si3N4) acoustic mirrors built on silicon substrates, and on insulating mirrors (SiO2, TaOx) built on insulating glass plates. TiOx seed layers were used to stimulate the growth of highly c-axis oriented AlN films, which was confirmed by XRD and SAW measurements. Coplanar Mo electrodes of different geometries were defined on top of the AlN films to excite the shear modes. All the structures analyzed displayed a clear longitudinal mode, corresponding to an acoustic velocity of 11000 m/s, but a null or extremely weak shear response corresponding to a sound velocity of around 6350 m/s. The simulation of the frequency response based on Mason's model confirms that the shear resonance is extremely weak. The observed longitudinal modes are attributed either to the field applied between the electrodes and a conductive plane (metallic layer or Si substrate) or to the electric field parallel to the c-axis in the edges of the electrodes or in tilted grains. The low excitation of shear modes is attributed to the very low values of electric field strength parallel to the surface.

Más información

ID de Registro: 15694
Identificador DC: http://oa.upm.es/15694/
Identificador OAI: oai:oa.upm.es:15694
Identificador DOI: 10.1109/ULTSYM.2012.0133
URL Oficial: https://ius2012.ifw-dresden.de/index.php?id=23
Depositado por: Memoria Investigacion
Depositado el: 25 Jun 2013 16:50
Ultima Modificación: 21 Abr 2016 15:57
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