Improved GaN-based HEMT performance by nanocrystalline diamond capping

Anderson, Travis J.; Hobart, Karl D.; Tadjer, Marko Jak; Feygelson, Tatyana I.; Imhoff, Eugene A.; Meyer, David J.; Katzer, D. Scott; Hite, Jennifer K.; Kub, Francis J.; Pate, Bradford B.; Binari, Steven. C. y Eddy Jr., Charles R. (2012). Improved GaN-based HEMT performance by nanocrystalline diamond capping. En: "70th Annual Device Research Conference", 18/06/2012-20/06/2012, University Park, Texas, EEUU. pp. 155-156.

Descripción

Título: Improved GaN-based HEMT performance by nanocrystalline diamond capping
Autor/es:
  • Anderson, Travis J.
  • Hobart, Karl D.
  • Tadjer, Marko Jak
  • Feygelson, Tatyana I.
  • Imhoff, Eugene A.
  • Meyer, David J.
  • Katzer, D. Scott
  • Hite, Jennifer K.
  • Kub, Francis J.
  • Pate, Bradford B.
  • Binari, Steven. C.
  • Eddy Jr., Charles R.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 70th Annual Device Research Conference
Fechas del Evento: 18/06/2012-20/06/2012
Lugar del Evento: University Park, Texas, EEUU
Título del Libro: 70th Annual Device Research Conference
Título de Revista/Publicación: Device research conference digest,
Fecha: 2012
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

As a wide-bandgap semiconductor, gallium nitride (GaN) is an attractive material for next-generation power devices. To date, the capabilities of GaN-based high electron mobility transistors (HEMTs) have been limited by self-heating effects (drain current decreases due to phonon scattering-induced carrier velocity reductions at high drain fields). Despite awareness of this, attempts to mitigate thermal impairment have been limited due to the difficulties involved with placing high thermal conductivity materials close to heat sources in the device. Heat spreading schemes have involved growth of AIGaN/GaN on single crystal or CVD diamond, or capping of fullyprocessed HEMTs using nanocrystalline diamond (NCD). All approaches have suffered from reduced HEMT performance or limited substrate size. Recently, a "gate after diamond" approach has been successfully demonstrated to improve the thermal budget of the process by depositing NCD before the thermally sensitive Schottky gate and also to enable large-area diamond implementation.

Más información

ID de Registro: 15755
Identificador DC: http://oa.upm.es/15755/
Identificador OAI: oai:oa.upm.es:15755
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6256985
Depositado por: Memoria Investigacion
Depositado el: 22 Jun 2013 08:30
Ultima Modificación: 21 Abr 2016 16:03
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