Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

Brazzini, Tommaso; Bengoechea Encabo, Ana; Sánchez García, Miguel Angel y Calle Gómez, Fernando (2013). Investigation of AlInN barrier ISFET structures with GaN capping for pH detection. "Sensors and Actuators B: Chemical", v. 176 ; pp. 704-707. ISSN 0925-4005. https://doi.org/10.1016/j.snb.2012.09.109.

Descripción

Título: Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
Autor/es:
  • Brazzini, Tommaso
  • Bengoechea Encabo, Ana
  • Sánchez García, Miguel Angel
  • Calle Gómez, Fernando
Tipo de Documento: Artículo
Título de Revista/Publicación: Sensors and Actuators B: Chemical
Fecha: Enero 2013
Volumen: 176
Materias:
Palabras Clave Informales: pH sensor; Ion sensitive field effect transistor; AlInN/GaN; 2DEG; Chemical sensor; HEMT
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates has been characterized. We analyzed the variation of the surface potential (ΔVsp/ΔpH) and current (ΔIds/ΔpH) with solution pH in devices with the same indium content (17%, in-plane lattice-matched to GaN) and different AlInN thickness (6 nm and 10 nm), and compared with the literature. The shrinkage of the barrier, that has the effect to increase the transconductance of the device, makes the 2-dimensional electron density (2DEG) at the interface very sensitive to changes in the surface. Although the surface potential sensitivity to pH is similar in the two devices, the current change with pH (ΔIds/ΔpH), when biasing the ISFET by a Ag/AgCl reference electrode, is almost 50% higher in the device with 6 nm AlInN barrier, compared to the device with 10 nm barrier. When measuring the current response (ΔIds/ΔpH) without reference electrode, the device with thinner AlInN layer has a larger response than the thicker one, of a factor of 140%, and that current response without reference electrode is only 22% lower than its maximum response obtained using reference electrode.

Más información

ID de Registro: 15766
Identificador DC: http://oa.upm.es/15766/
Identificador OAI: oai:oa.upm.es:15766
Identificador DOI: 10.1016/j.snb.2012.09.109
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0925400512010234
Depositado por: Memoria Investigacion
Depositado el: 29 Jun 2013 08:40
Ultima Modificación: 01 Feb 2015 23:56
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