Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns

Lefebvre, P. and Albert, Steven and Ristic, Jelena and Fernández-Garrido, Sergio and Grandal Quintana, Javier and Sánchez García, Miguel Angel and Calleja Pardo, Enrique (2012). Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns. "Superlattices and Microstructures", v. 52 (n. 2); pp. 165-171. ISSN 0749-6036. https://doi.org/10.1016/j.spmi.2012.05.001.

Description

Title: Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns
Author/s:
  • Lefebvre, P.
  • Albert, Steven
  • Ristic, Jelena
  • Fernández-Garrido, Sergio
  • Grandal Quintana, Javier
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Superlattices and Microstructures
Date: August 2012
ISSN: 0749-6036
Volume: 52
Subjects:
Freetext Keywords: Nanocolumns; Nanowires; Group III nitrides; GaN; InGaN; Photoluminescence; Surface effects
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

GaN and InGaN nanocolumns of various compositions are studied by room-temperature photoluminescence (PL) under different ambient conditions. GaN nanocolumns exhibit a reversible quenching upon exposure to air under constant UV excitation, following a t−1/2 time dependence and resulting in a total reduction of intensity by 85–90%, as compared to PL measured in vacuum, with no spectral change. This effect is not observed when exposing the samples to pure nitrogen. We attribute this effect to photoabsorption and photodesorption of oxygen that modifies the surface potential bending. InGaN nanocolumns, under the same experimental conditions do not show the same quenching features: The high-energy part of the broad PL line is not modified by exposure to air, whereas a lower-energy part, which does quench by 80–90%, can now be distinguished. We discuss the different behaviors in terms of carrier localization and possible composition or strain gradients in the InGaN nanocolumns.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7228999SMASHUnspecifiedSmart Nanostructured Semiconductors for Energy-Saving Light Solutions

More information

Item ID: 15769
DC Identifier: http://oa.upm.es/15769/
OAI Identifier: oai:oa.upm.es:15769
DOI: 10.1016/j.spmi.2012.05.001
Official URL: http://www.sciencedirect.com/science/article/pii/S0749603612001279
Deposited by: Memoria Investigacion
Deposited on: 22 Jul 2013 18:19
Last Modified: 26 Jan 2015 14:35
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