Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures

Tadjer, Marko Jak and Anderson, Travis J. and Hobart, Karl D. and Nyakiti, Luke O. and Wheeler, Virginia D. and Myers-Ward, Rachael L. and Gaskill, D. Kurt and Eddy Jr., Charles R. and Kub, Francis J. and Calle Gómez, Fernando (2012). Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures. "Applied Physics Letters" (n. 100); pp. 193506-193509. ISSN 0003-6951. https://doi.org/10.1063/1.4712621.

Description

Title: Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures
Author/s:
  • Tadjer, Marko Jak
  • Anderson, Travis J.
  • Hobart, Karl D.
  • Nyakiti, Luke O.
  • Wheeler, Virginia D.
  • Myers-Ward, Rachael L.
  • Gaskill, D. Kurt
  • Eddy Jr., Charles R.
  • Kub, Francis J.
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: 10 May 2012
ISSN: 0003-6951
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Vertical diodes of epitaxial graphene on n 4H-SiC were investigated. The graphene Raman spectraexhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film.Rectifying properties improved at low temperatures as the reverse leakage decreased over six ordersof magnitude without freeze-out in either material. Carrier concentration of 10 16 cm 3in the SiCremained stable down to 15 K, while accumulation charge decreased and depletion width increasedin forward bias. The low barrier height of 0.08 eV and absence of recombination-induced emissionindicated majority carrier field emission as the dominant conduction mechanism.

More information

Item ID: 15779
DC Identifier: http://oa.upm.es/15779/
OAI Identifier: oai:oa.upm.es:15779
DOI: 10.1063/1.4712621
Official URL: http://apl.aip.org/resource/1/applab/v100/i19/p193506_s1?isAuthorized=no
Deposited by: Memoria Investigacion
Deposited on: 15 Jun 2013 11:30
Last Modified: 21 Apr 2016 16:04
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