Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Gür, Emre and Tabares Jimenez, Gema and Arehart, Aaron R. and Chauveau, J.-M. and Hierro Cano, Adrián and Ringel, Steven A. (2012). Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy. "Journal of Applied Physics Letters", v. 112 (n. 12); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4769874.

Description

Title: Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
Author/s:
  • Gür, Emre
  • Tabares Jimenez, Gema
  • Arehart, Aaron R.
  • Chauveau, J.-M.
  • Hierro Cano, Adrián
  • Ringel, Steven A.
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics Letters
Date: December 2012
ISSN: 0003-6951
Volume: 112
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples.

More information

Item ID: 15923
DC Identifier: http://oa.upm.es/15923/
OAI Identifier: oai:oa.upm.es:15923
DOI: 10.1063/1.4769874
Official URL: http://jap.aip.org/resource/1/japiau/v112/i12/p123709_s1?isAuthorized=no
Deposited by: Memoria Investigacion
Deposited on: 25 Jun 2013 19:02
Last Modified: 21 Apr 2016 16:14
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