Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Gür, Emre; Tabares Jimenez, Gema; Arehart, Aaron R.; Chauveau, J.-M.; Hierro Cano, Adrián y Ringel, Steven A. (2012). Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy. "Journal of Applied Physics Letters", v. 112 (n. 12); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4769874.

Descripción

Título: Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
Autor/es:
  • Gür, Emre
  • Tabares Jimenez, Gema
  • Arehart, Aaron R.
  • Chauveau, J.-M.
  • Hierro Cano, Adrián
  • Ringel, Steven A.
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Applied Physics Letters
Fecha: Diciembre 2012
Volumen: 112
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (1MB) | Vista Previa

Resumen

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples.

Más información

ID de Registro: 15923
Identificador DC: http://oa.upm.es/15923/
Identificador OAI: oai:oa.upm.es:15923
Identificador DOI: 10.1063/1.4769874
URL Oficial: http://jap.aip.org/resource/1/japiau/v112/i12/p123709_s1?isAuthorized=no
Depositado por: Memoria Investigacion
Depositado el: 25 Jun 2013 19:02
Ultima Modificación: 21 Abr 2016 16:14
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM