Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Luna García de la Infanta, Esperanza and Fernández González, Alvaro de Guzmán and Trampert, Achim and Álvarez Galindo, Gabriel (2012). Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces. "Physical Review Letters", v. 109 ; pp. 126101-126105. ISSN 0031-9007. https://doi.org/10.1103/PhysRevLett.109.126101.

Description

Title: Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces
Author/s:
  • Luna García de la Infanta, Esperanza
  • Fernández González, Alvaro de Guzmán
  • Trampert, Achim
  • Álvarez Galindo, Gabriel
Item Type: Article
Título de Revista/Publicación: Physical Review Letters
Date: 11 October 2012
ISSN: 0031-9007
Volume: 109
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by twodimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.

More information

Item ID: 16022
DC Identifier: http://oa.upm.es/16022/
OAI Identifier: oai:oa.upm.es:16022
DOI: 10.1103/PhysRevLett.109.126101
Official URL: http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.109.126101
Deposited by: Memoria Investigacion
Deposited on: 26 Jun 2013 16:45
Last Modified: 27 Apr 2016 07:54
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