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Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
Citation
García Hemme, Eric and García Hernansanz, Rodrigo and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Alvaro del and Mártil de la Plaza, Ignacio and González Díaz, Germán (2012). Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. "Applied Physics Letters", v. 101 (n. 19); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4766171.
Description
| Title: | Sub-bandgap spectral photo-response analysis of Ti supersaturated Si |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | November 2012 |
| ISSN: | 0003-6951 |
| Volume: | 101 |
| Subjects: | |
| Freetext Keywords: | deep levels, electrical conductivity, electron-hole Recombination, elemental semiconductors, melting, metal-insulator transition, optical constants, photoconductivity, pulsed laser deposition, silicon |
| Faculty: | Instituto de Energía Solar (IES) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
More information
| Item ID: | 16081 |
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| DC Identifier: | http://oa.upm.es/16081/ |
| OAI Identifier: | oai:oa.upm.es:16081 |
| DOI: | 10.1063/1.4766171 |
| Official URL: | http://apl.aip.org/resource/1/applab/v101/i19/p192101_s1 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 20 Jul 2013 09:37 |
| Last Modified: | 21 Apr 2016 16:25 |
