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Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
Cita
García Hemme, Eric; García Hernansanz, Rodrigo; Olea Ariza, Javier; Pastor Pastor, David; Prado Millán, Alvaro del; Mártil de la Plaza, Ignacio y González Díaz, Germán (2012). Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. "Applied Physics Letters", v. 101 (n. 19); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4766171.
Descripción
| Título: | Sub-bandgap spectral photo-response analysis of Ti supersaturated Si |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Physics Letters |
| Fecha: | Noviembre 2012 |
| Volumen: | 101 |
| Materias: | |
| Palabras Clave Informales: | deep levels, electrical conductivity, electron-hole Recombination, elemental semiconductors, melting, metal-insulator transition, optical constants, photoconductivity, pulsed laser deposition, silicon |
| Escuela: | Instituto de Energía Solar (IES) (UPM) |
| Departamento: | Otro |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
Más información
| ID de Registro: | 16081 |
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| Identificador DC: | http://oa.upm.es/16081/ |
| Identificador OAI: | oai:oa.upm.es:16081 |
| Identificador DOI: | 10.1063/1.4766171 |
| URL Oficial: | http://apl.aip.org/resource/1/applab/v101/i19/p192101_s1 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 20 Jul 2013 09:37 |
| Ultima Modificación: | 21 Abr 2016 16:25 |
