Absorption coefficient for the intraband transitions in quantum dot materials

Luque López, Antonio and Martí Vega, Antonio and Mellor Null, Alexander Virgil and Fuertes Marrón, David and Tobías Galicia, Ignacio and Antolín Fernández, Elisa (2013). Absorption coefficient for the intraband transitions in quantum dot materials. "Progress in Photovoltaics: Research and Applications", v. 21 (n. 4); pp. 658-667. ISSN 1062-7995. https://doi.org/10.1002/pip.1250.

Description

Title: Absorption coefficient for the intraband transitions in quantum dot materials
Author/s:
  • Luque López, Antonio
  • Martí Vega, Antonio
  • Mellor Null, Alexander Virgil
  • Fuertes Marrón, David
  • Tobías Galicia, Ignacio
  • Antolín Fernández, Elisa
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics: Research and Applications
Date: June 2013
ISSN: 1062-7995
Volume: 21
Subjects:
Freetext Keywords: intermediate band solar cell; absorption; quantum dot; quantum calculations
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band

More information

Item ID: 16087
DC Identifier: http://oa.upm.es/16087/
OAI Identifier: oai:oa.upm.es:16087
DOI: 10.1002/pip.1250
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pip.1250/abstract
Deposited by: Memoria Investigacion
Deposited on: 01 Jul 2013 17:12
Last Modified: 01 Jul 2015 22:56
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