Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

Pastor Pastor, David and Olea Ariza, Javier and Muñoz Martín, Ángel and Climent Font, Aurelio and Mártil de la Plaza, Ignacio and González Díaz, Germán (2012). Interstitial Ti for intermediate band formation in Ti-supersaturated silicon. "Journal of Applied Physics", v. 112 (n. 11); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4768274.

Description

Title: Interstitial Ti for intermediate band formation in Ti-supersaturated silicon
Author/s:
  • Pastor Pastor, David
  • Olea Ariza, Javier
  • Muñoz Martín, Ángel
  • Climent Font, Aurelio
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: 2012
ISSN: 0021-8979
Volume: 112
Subjects:
Freetext Keywords: elemental semiconductors, interstitials, Rutherford backscattering, secondary ion mass spectra, silicon, time of flight mass spectra, titanium
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites.

More information

Item ID: 16098
DC Identifier: http://oa.upm.es/16098/
OAI Identifier: oai:oa.upm.es:16098
DOI: 10.1063/1.4768274
Official URL: http://jap.aip.org/resource/1/japiau/v112/i11/p113514_s1?isAuthorized=no
Deposited by: Memoria Investigacion
Deposited on: 06 Jul 2013 09:11
Last Modified: 21 Apr 2016 16:26
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