Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application

Tablero Crespo, César (2012). Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application. "Thin Solid Films", v. 520 (n. 15); pp. 5011-5013. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2012.03.020.

Description

Title: Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application
Author/s:
  • Tablero Crespo, César
Item Type: Article
Título de Revista/Publicación: Thin Solid Films
Date: 31 May 2012
ISSN: 0040-6090
Volume: 520
Subjects:
Freetext Keywords: Electronic structure; Semiconductors; Impurities; Photovoltaics
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The optoelectronic properties of Cu2ZnSnS4 and environmental considerations have attracted significant interest for photovoltaics. Using first-principles, we analyze the possible improvement of this material as a photovoltaic absorber via the isoelectronic substitution of S with O atoms. The evolution of the acceptor level is analyzed with respect to the atomic position of the nearest neighbors of the O atom. We estimate the maximum efficiency of this compound when used as a light absorber. The presence of the sub-band gap level below the conduction band could increases the solar-energy conversion with respect to the host.

More information

Item ID: 16117
DC Identifier: http://oa.upm.es/16117/
OAI Identifier: oai:oa.upm.es:16117
DOI: 10.1016/j.tsf.2012.03.020
Official URL: http://www.sciencedirect.com/science/article/pii/S0040609012002799
Deposited by: Memoria Investigacion
Deposited on: 07 Jul 2013 07:25
Last Modified: 21 Apr 2016 16:27
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