Electronic and photon absorber properties of Cr-Doped Cu2ZnSnS4

Tablero Crespo, César (2012). Electronic and photon absorber properties of Cr-Doped Cu2ZnSnS4. "Journal of Physical Chemistry C", v. 116 (n. 44); pp. 23224-23230. ISSN 1932-7447. https://doi.org/10.1021/jp306283v.

Description

Title: Electronic and photon absorber properties of Cr-Doped Cu2ZnSnS4
Author/s:
  • Tablero Crespo, César
Item Type: Article
Título de Revista/Publicación: Journal of Physical Chemistry C
Date: November 2012
Volume: 116
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The Cu2ZnSnS4 (CZTS) semiconductor is a potential photovoltaic material due to its optoelectronic properties. These optoelectronic properties can be potentially improved by the insertion of intermediate states into the energy bandgap. We explore this possibility using Cr as an impurity. We carried out first-principles calculations within the density functional theory analyzing three substitutions: Cu, Sn, or Zn by Cr. In all cases, the Cr introduces a deeper band into the host energy bandgap. Depending on the substitution, this band is full, empty, or partially full. The absorption coefficients in the independent-particle approximation have also been obtained. Comparison between the pure and doped host's absorption coefficients shows that this deeper band opens more photon absorption channels and could therefo:e increase the solar-light absorption with respect to the host.

More information

Item ID: 16123
DC Identifier: http://oa.upm.es/16123/
OAI Identifier: oai:oa.upm.es:16123
DOI: 10.1021/jp306283v
Official URL: http://pubs.acs.org/doi/abs/10.1021/jp306283v
Deposited by: Memoria Investigacion
Deposited on: 06 Jul 2013 11:54
Last Modified: 22 Sep 2014 11:11
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